SBIR/STTR Research Award

AlInN/GaN heterostructures for X-band RF power amplification

Award identifier b5587bc19700de908edb569923167b6f22533b92b9019993bbfd10dc34b34022Awarding agency Department of Defense · Missile Defense Agency

Award amount

$749,823

Program and phase

SBIR · Phase II

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Sensor Electronic Technology, Inc.
Proposal award date
2010-09-20
Contract end date
2012-09-20
UEI
ZLAMG4KBKN15
Solicitation number
2008.3
Topic code
MDA08-024

Research abstract

SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVD® growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and the record-breaking HFETs with peak drain currents exceeding 2 A/mm and ft and fmax above 100 GHz. Phase II program will focus on the optimization and scaleup of the growth technology. We will also demonstrate MOSHFET with current density higher than 2.5A/mm and cutoff frequency over 150GHz.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture

Agency intelligence

Department of Defense

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