SBIR/STTR Research Award
High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter
Award amount
$69,199Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2010-04-13
- Contract end date
- 2010-10-21
- UEI
- ZLAMG4KBKN15
- Solicitation number
- 2009.3
- Topic code
- N093-200
Research abstract
We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and technology. Using recent achievements in the epilayer growth, contact formation and active region design, the proposed limiter will achieve a very low insertion loss (0.1- 1dB, depending on the required protection power), low noise, high maximum operating temperatures, between 300oC and 600oC or even higher, and high protection and maximum (breakdown limited) powers, well exceeding +60 dBm. The proposed technology is also capable to providing limiters with low protection powers, in the range of 15 to 30 dBm.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low loss self-biased ferrite circulators for size and weight sensitive applications requiring high power handling and temperature stability
- Low loss self-biased ferrite materials for size and weight sensitive circulator applications requiring high power handling and high temperature stabil
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture