SBIR/STTR Research Award
Large Area, High Power, Vertically Conducting Deep UV LEDs
Award amount
$729,984Program and phase
SBIR · Phase IIAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- NITEK, INC.
- Proposal award date
- 2010-03-25
- Contract end date
- 2012-03-25
- UEI
- GXLNRB6ZFNB7
- Solicitation number
- 2008.2
- Topic code
- A08-077
Research abstract
This SBIR Phase II project will result in Nitek Inc. commercializing high power, large area, UVC-LED Lamps based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UVC-LEDs (ë
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- SBIR Phase I: High power, high efficiency micropixel ultraviolet light emitting lamp
- AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters
- SBIR Phase II: High Power, Vertically Conducting UV LEDs
- SBIR Phase II: Bulk AlN Growth For III-Nitride Devices
- AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Power AlInGaN-Based Deep Ultraviolet Light Emitting Diodes
- High Power AlInGaN-Based Deep Ultraviolet Light Emitting Diodes
- Large Area, High Power, Vertically Conducting Deep UV LEDs
Research funding history
10 SBIR/STTR records share this UEI (2008–2011). Reported award amounts total $3,392,454. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation