AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.