High Power AlInGaN-Based Deep Ultraviolet Light Emitting Diodes

Sensor Electronic Technology, Inc. will develop, prototype and start pilot production of new class of high power deep ultraviolet (DUV) light-emitting diodes (LED) using our proprietary and patented technology and novel technical approaches demonstrated during Phase I effort. Target performance characteristics for large area, high power DUV LEDs at the end of Phase II program are (i) 5% wall plug efficiency and 10,000 hours lifetime for CW output power of 10 mW/chip at 275 nm wavelength; and (ii) maximum peak power of up to 250 mW/chip. Efficiency, lifetime and output power targets for DUV LEDs will be achieved through reduced growth defect density and improved material quality using deposition over patterned substrates and strain management by incorporating graded superlattice structures, new p-contact layer designs based on combination of graded ternary (AlGaN) and quaternary (AlInGaN) layers and superlattices to reduce operating voltage, novel designs for large area (1 mm2) devices, fabrication of vertically conducting DUV LEDs with improved light extraction by bottom n-contact layer surface roughening and integration of 2D photonic crystal structures. Device packaging will be modified to accommodate new designs and improve thermal management to suppress premature device failure.