Engineered Substrates for “Zero-Penalty” Radiation Hardening of Ultra Deep Submicron Commercial Processes

In this proposed Phase II program we will build on the successful Phase I program where we for the first time implemented engineered epitaxial layers based on nanostructure technology that were used to harden commercial silicon devices against radiation by minimizing collected photocurrents (electron-hole pairs) via recombination centers where we demonstrated that improved radiation hardness could be achieved using this approach without causing substantial impact on the electrical performance of the devices. In this Phase II effort we will use CFDRC NanoTCAD transistor modeling to efficiently simulate the specific phenomenon related to ionizing radiation, including single-event effects (SEE), single-event latchups (SEL), single-event upsets (SEU), total ionizing dose (TID) effects, including leakage due to trapped charges in oxides and shallow trench isolation (STI); as well as dose rate (transient radiation) effects, like X-ray pulses, resulting in parasitic photocurrents. We will also optimize the nanostructure film for use in TI and other deep submicron fabrication facilities. Texas Instruments has domestic commercial and military fabrication facilities, down to a 45 nm technology node, as well as the military and aerospace process experience to assist Radiation Assured Devices (RAD), Inc. in making this program a success.