SBIR/STTR Research Award
Novel HEMT based on GaN on Diamond for High Power Amplifiers
Award amount
$985,680Program and phase
SBIR · Phase IIAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Nitronex Corporation
- Proposal award date
- 2009-08-14
- Contract end date
- 2011-08-14
- UEI
- Not reported
- Solicitation number
- 2007.3
- Topic code
- MDA07-034
Research abstract
The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Novel HEMT based on GaN on Diamond for High Power Amplifiers
- Device Level Thermal Management Solutions for Phased Array Rada
- Integration of Bulk GaN with Diamond for Device-level Thermal Management Solutions
- Direct Die Attached CTE Matched Ultra High Thermal Conductivity Graphite/Aluminum Heat Sinks for High RF Power Density Phased Array Radar Systems