SBIR/STTR Research Award
Integration of Bulk GaN with Diamond for Device-level Thermal Management Solutions
Award amount
$99,992Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2008-02-26
- Contract end date
- 2008-08-25
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2007.3
- Topic code
- MDA07-034
Research abstract
In this Phase I proposal, Kyma Technologies will perform a proof of concept demonstration of high quality bulk GaN/diamond integration for advanced thermal management of high power density GaN-based device applications. The development effort will include separation of thin GaN layers from bulk substrates and bonding to diamond.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Novel HEMT based on GaN on Diamond for High Power Amplifiers
- Novel HEMT based on GaN on Diamond for High Power Amplifiers
- Device Level Thermal Management Solutions for Phased Array Rada
- Direct Die Attached CTE Matched Ultra High Thermal Conductivity Graphite/Aluminum Heat Sinks for High RF Power Density Phased Array Radar Systems
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration