Device Level Thermal Management Solutions for Phased Array Rada

It is the intent of Hittite through this proposal to explore the feasibility of using chemical vapor deposition (CVD)-diamond as a passivating layer within the junction of a Gallium Nitride (GaN) microwave transistor. CVD-diamond being a material with very high thermal conductivity, and being located as close as possible to the heat dissipation source, will have the effect of reducing junction temperature creating a potential for increased radio frequency (RF) output power from the GaN device. The deposition will be constrained to an area over the transistor drain and source metallization as opposed to an entire wafer, thereby reducing fabricated wafer bow.