Multi-color THz detectors/cameras based on patterned AlGaN/GaN HEMT structures with 2DEG

We propose to develop GaN based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip.  The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG (commonly known as field-effect transistors) respond to the incoming FIR radiation due to the rectification of radiation induced oscillations of electron density (electron plasma).   BENEFIT: These detectors/cameras are especially promising because of tremendous potential for dramatically reduced costs, much smaller sizes, and better reliability and radiation hardness compared to devices commercially available now. THz detectors also find applications in diverse fields including but not limited to homeland security, genomics, medical diagnosis, semiconductor device and material characterization, and chemical and pharmaceutical industries.)