SBIR/STTR Research Award
The Characterization and Mitigation of Single Event Effects in Ultra-Deep Submicron (< 90nm) Microelectronics
Award amount
$750,000Program and phase
SBIR · Phase IIAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Threat Reduction Agency
- Recipient company
- Orora Design Technologies, Inc.
- Proposal award date
- 2008-09-09
- Contract end date
- 2010-09-08
- UEI
- Not reported
- Solicitation number
- 2007.1
- Topic code
- DTRA07-005
Research abstract
Orora Design Technologies proposes to develop electronic design automation (EDA) tools employing minimally invasive circuit design-based methods to mitigate single event effects (SEEs) for next generation Ultra-DSM CMOS (<90nm) space electronics. Robust circuit modeling, simulation and optimization tools will be developed to allow circuit designers to quickly identify sensitive SEE circuitry, characterize the SEE sensitivity, and automatically insert the minimally invasive SEE mitigation into complex circuit designs, and then optimize the performance of an ultra-DSM circuit while meeting the radiation-hardness requirements with the minimal area and performance overhead. The SEE design-based mitigation EDA tool, as well as enabling modeling, simulation and optimization tools, will be integrated into industry standard design environments with automated design flows. The proposed tool development will be driven by, and validated against, several 90nm and below real circuits from a collaborative project with Boeing Solid-State Electronics Development for satellite systems.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- SEE Modeling and Mitigation in Ultra-Deep Submicron Microelectronics
- SEE Modeling and Mitigation in Ultra-Deep Submicron Microelectronics
- The Characterization and Mitigation of Single Event Effects in Ultra-Deep Submicron (< 90nm) Microelectronics