SBIR/STTR Research Award

The Characterization and Mitigation of Single Event Effects in Ultra-Deep Submicron (< 90nm) Microelectronics

Award identifier 718d1642fd9f4530e360e6bf5883ec376726ea0570b1f0150499bb6422ff1f3aAwarding agency Department of Defense · Defense Threat Reduction Agency

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Defense Threat Reduction Agency
Recipient company
Orora Design Technologies, Inc.
Proposal award date
2008-09-09
Contract end date
2010-09-08
UEI
Not reported
Solicitation number
2007.1
Topic code
DTRA07-005

Research abstract

Orora Design Technologies proposes to develop electronic design automation (EDA) tools employing minimally invasive circuit design-based methods to mitigate single event effects (SEEs) for next generation Ultra-DSM CMOS (<90nm) space electronics. Robust circuit modeling, simulation and optimization tools will be developed to allow circuit designers to quickly identify sensitive SEE circuitry, characterize the SEE sensitivity, and automatically insert the minimally invasive SEE mitigation into complex circuit designs, and then optimize the performance of an ultra-DSM circuit while meeting the radiation-hardness requirements with the minimal area and performance overhead. The SEE design-based mitigation EDA tool, as well as enabling modeling, simulation and optimization tools, will be integrated into industry standard design environments with automated design flows. The proposed tool development will be driven by, and validated against, several 90nm and below real circuits from a collaborative project with Boeing Solid-State Electronics Development for satellite systems.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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