SBIR/STTR Research Award

High efficiency deep green light emitting diode

Award identifier 6a753313ee6f66f5a44daf0488b74b29d3d4b864778b145e0d2f0c1f365f9709Awarding agency Department of Defense · Army

Award amount

$99,919

Program and phase

STTR · Phase I

Award year

2007

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Sensor Electronic Technology, Inc.
Proposal award date
2007-07-13
Contract end date
2008-01-09
UEI
ZLAMG4KBKN15
Solicitation number
Not reported
Topic code
A07-T018

Research abstract

Sensor Electronic Technology, Inc. proposes to use QD-like fluctuations of InGaN QW with controllable spatial distribution for high efficiency green LEDs. We will investigate both theoretically and experimentally the performance of green InGaN MQW structures with fluctuations of composition and thickness of InGaN quantum wells. Both types of these fluctuations would lead to the spatial localization of electrons (and holes) thereby reducing their in-plane diffusion to non-radiative recombination cites. We propose to use our proprietary MEMOCVD epitaxial process for growth of high quality InGaN layers with controllable distribution of fluctuations.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture

Agency intelligence

Department of Defense

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