SBIR/STTR Research Award
High Performance Metal-Insulator Transistors for Flexible Electronics
Award amount
$2,394,480Program and phase
STTR · Phase IIAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- PHIAR CORP.
- Proposal award date
- 2006-08-30
- Contract end date
- 2008-11-30
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- ST041-005
Research abstract
We propose to develop and demonstrate thin-film transistors (TFTs) capable of operation at microwave and millimeter-wave frequencies. These ultra-fast devices are based on a patented metal-insulator tunneling hot electron transistor structure. Comprising thin films of only metals and dielectrics, our TFTs require only low temperature processing and should be inherently compatible with large-area, flexible, polymer substrates. Microwave TFTs will enable a number of important defense, scientific, and commercial applications.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Performance Transistors on Flexible Substrates
- Multi-GHz TFT
- High Performance Metal-Insulator Transistors for Flexible Electronics
- Fabrication of High Electrical Mobility Transistors on Flexible Substrates for Phased Array Radar and Terahertz Antennas
- Multi-GHz InP TFT