SBIR/STTR Research Award
High Performance Transistors on Flexible Substrates
Award amount
$1,496,510Program and phase
STTR · Phase IIAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Nanosys
- Proposal award date
- 2005-08-04
- Contract end date
- 2007-05-30
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- ST041-005
Research abstract
This Small Business Technology Transfer Research Phase II project continues the successful work initiated under our Phase 1 program to develop a novel low temperature processing technology for the fabrication of low resistance ohmic source-drain contacts for high performance, nanowire transistors on low-temperature plastic substrates. In Phase I, we developed the instrument design, setup and initial process parameters for an innovative low temperature contact technology. We successfully applied the process to fabricate prototype nanowire-based transistors. In Phase II, we will continue to develop and optimize the processes to fabricate commercially-relevant prototype, CMOS, large area, flexible, nanowire-based transistor circuits on plastic. Through the characterization and modeling of these devices, we will develop a complete understanding of the potential application areas and performance limits of this unique technology for electronics applications, and particularly for RF electronics applications, for which conventional TFTs are not likely to be suitable.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
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