SBIR/STTR Research Award

High Performance Transistors on Flexible Substrates

Award identifier 95539cbfc2db90966b5e7a4a6b63354834cbc3462476cadcb71da8d86bf75f84Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$1,496,510

Program and phase

STTR · Phase II

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Nanosys
Proposal award date
2005-08-04
Contract end date
2007-05-30
UEI
Not reported
Solicitation number
Not reported
Topic code
ST041-005

Research abstract

This Small Business Technology Transfer Research Phase II project continues the successful work initiated under our Phase 1 program to develop a novel low temperature processing technology for the fabrication of low resistance ohmic source-drain contacts for high performance, nanowire transistors on low-temperature plastic substrates. In Phase I, we developed the instrument design, setup and initial process parameters for an innovative low temperature contact technology. We successfully applied the process to fabricate prototype nanowire-based transistors. In Phase II, we will continue to develop and optimize the processes to fabricate commercially-relevant prototype, CMOS, large area, flexible, nanowire-based transistor circuits on plastic. Through the characterization and modeling of these devices, we will develop a complete understanding of the potential application areas and performance limits of this unique technology for electronics applications, and particularly for RF electronics applications, for which conventional TFTs are not likely to be suitable.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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