SBIR/STTR Research Award

Multi-GHz InP TFT

Award identifier 6e7ca5664c40d10d237c7ecd6f9320dac1dec51ebf0e6ad937378490a9e86f03Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$99,000

Program and phase

STTR · Phase I

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Lightspin Technologies Inc
Proposal award date
2004-09-02
Contract end date
2005-03-15
UEI
M29HE5CKLCF8
Solicitation number
Not reported
Topic code
ST041-005

Research abstract

This project proposes design, construction and demonstration of a new type of thin-film transistor (TFT), based on indium phosphide compound semiconductors. Models predict unity power gain and unity current gain (fT and fmax) above 10 GHz for the new TFTs in a polycrystalline form compatible with large-area deposition & patterning on flexible metal foils or polymer sheets, using low cost, large (> 1 um) feature sizes. These TFTs should eventually outperform the best high-cost, single-crystal silicon or gallium arsenide transistors at the same feature size and temperature.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

31 SBIR/STTR records share this UEI (2002–2021). Reported award amounts total $9,503,040. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Health and Human Services, Department of Energy, National Aeronautics and Space Administration, National Science Foundation

Agency intelligence

Department of Defense

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