SBIR/STTR Research Award

Multi-GHz TFT

Award identifier b4075533ac3dd2098a614e23483ea93bb8921946382f9433e8f42f93a6787010Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$750,000

Program and phase

STTR · Phase II

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Lightspin Technologies Inc
Proposal award date
2005-09-26
Contract end date
2007-12-31
UEI
M29HE5CKLCF8
Solicitation number
Not reported
Topic code
ST041-005

Research abstract

The project will demonstrate a multi-GHz thin-film transistor with multi-micron feature sizes. The inherently defect-tolerant character of the indium arsenide-based materials system supports high mobilities in defect-rich, polycrystalline epitaxial layers. Circuits using the TFTs will eventually be deployable on flexible/conformal substrates extensible to multi-meter^2 and roll-to-roll substrates. Production promises to have extremely low capital and unit cost requirements, as well as rapid turn-around.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

31 SBIR/STTR records share this UEI (2002–2021). Reported award amounts total $9,503,040. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Health and Human Services, Department of Energy, National Aeronautics and Space Administration, National Science Foundation

Agency intelligence

Department of Defense

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