SBIR/STTR Research Award
Micropipe-free silicon carbide (SiC) substrates for high power (>10kV) electronics
Award amount
$1,129,090Program and phase
SBIR · Phase IIAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Not reported
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- 2006-03-30
- Contract end date
- 2008-11-30
- UEI
- Not reported
- Solicitation number
- 2003.2
- Topic code
- SB032-044
Research abstract
Based on the successful proof of co
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications
- Wide Bandgap Semiconductor Materials and Devices
- Novel approach to fabricate advanced substrate materials for AlGaN-based UV emitters
- Wide Bandgap Semiconductor Materials and Devices
- Wide Bandgap Semiconductor Materials and Devices