SBIR/STTR Research Award
Wide Bandgap Semiconductor Materials and Devices
Award amount
$98,645Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- 2003-12-09
- Contract end date
- 2004-08-08
- UEI
- Not reported
- Solicitation number
- 2003.2
- Topic code
- SB032-044
Research abstract
Development of high quality 4H silicon carbide (SiC) substrates will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique for making such substrates. A number of characterization tasks will also be performed on the wafers produced under to proposed effort
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Micropipe-free silicon carbide (SiC) substrates for high power (>10kV) electronics
- Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications
- Wide Bandgap Semiconductor Materials and Devices
- Novel approach to fabricate advanced substrate materials for AlGaN-based UV emitters
- Wide Bandgap Semiconductor Materials and Devices