SBIR/STTR Research Award
Wide Bandgap Semiconductor Materials and Devices
Award amount
$1,351,440Program and phase
SBIR · Phase IIAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- 2005-01-27
- Contract end date
- 2007-04-28
- UEI
- Not reported
- Solicitation number
- 2003.2
- Topic code
- SB032-044
Research abstract
In this project, INTRINSIC proposes to demonstrate production quality 3-inch semi-insulating SiC wafers based on the successful results obtained in the Phase I effort. The objectives of the Phase II project are to expand the ultrahigh purity (UHP) semi-insulating SiC wafer size from 2-inch to 3-inch with high yield, high crystal quality and reduced impurities. The wafers will be polished via INTRINSIC’s proprietary chemical mechanical polishing (CMP) technique.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Micropipe-free silicon carbide (SiC) substrates for high power (>10kV) electronics
- Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications
- Novel approach to fabricate advanced substrate materials for AlGaN-based UV emitters
- Wide Bandgap Semiconductor Materials and Devices
- Wide Bandgap Semiconductor Materials and Devices