Novel approach to fabricate advanced substrate materials for AlGaN-based UV emitters

The main goal for this project is to develop manufacturing technology for low defect substrate materials for high efficient UV light emitting devices based on group III nitride semiconductors. Three types of substrate materials are primary targets of this work: (1) AlGaN-on-sapphire templates, (2) AlN-on-SiC templates, and (3) free-standing AlGaN wafers. Proposed technical approach is based on hydride vapor phase epitaxial (HVPE) technology developed at TDI for GaN and AlN materials. In Phase I, TDI has demonstrated UV transparent AlGaN epitaxial materials grown by HVPE method. In Phase II, TDI will modify and develop specific versions of HVPE technology for each of the above substrate materials. Defect density reduction in these materials is the prime technical goal of the project. Grown materials will be delivered to DARPA and DARPA designated organizations for material evaluation and device fabrication.