SBIR/STTR Research Award
Low Thermal Resistance High Power RF Devices
Award amount
$99,909Program and phase
SBIR · Phase IAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- CAPESYM INC
- Proposal award date
- 2006-03-03
- Contract end date
- 2006-09-04
- UEI
- CSZST8YFP7K1
- Solicitation number
- 2005.3
- Topic code
- MDA05-034
Research abstract
The goal of this program is to improve the thermal performance of RF power devices, by reducing their internal thermal resistance. This work will benefit both High Voltage GaAs (HV-GaAs) as well as GaN and SiC RF devices.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Crystal Growth and Characterization of Doped VUV Crystals
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Radar Advanced Receiver/Exciter (RARE)
- Low Thermal Resistance RF Devices
- Wideband Digital Beamforming for SPEAR
- Fiber-Coupled Array Calibration System for On-Site Tx/Rx-Mode Calibration of Large-Scale Phased Antenna Arrays
- Wideband Digital Beamforming Processor for Multi-Beam Phased Array
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration