High Performance Transistors on Flexible Substrates

This Small Business Technology Transfer Research Phase I project determines the feasibility of developing a novel low temperature process technology for the formation of low resistance contacts for fabricating high performance, nanowire transistors on flexible plastic substrates. Our proposed approach is based on an innovative plasma ion immersion implantation doping and laser annealing recrystallization process. The proposal demonstrates the potential advantages of this process to provide low ion energy implantation, uniform and conformal doping profiles, junction profile control, ohmic-contact resistance and compatibility with low temperature plastic substrates with nanowire-based transistors. In Phase I, we determine the instrument design, setup and initial process parameters and evaluate the feasibility of applying this process technology to nanowire-based transistors on flexible substrates. In Phase II, the information gathered in Phase I will be used to fabricate fully optimized prototype large area, flexible nanowire-based transistor circuits.