SBIR/STTR Research Award
Plasma Wave Electronics
Award amount
$749,919Program and phase
STTR · Phase IIAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2004-09-01
- Contract end date
- 2005-08-31
- UEI
- ZLAMG4KBKN15
- Solicitation number
- Not reported
- Topic code
- ARMY03-T06
Research abstract
Terahertz plasma wave detectors and emitters utilizing the high-density 2-D electrons in submicron AlGaInN/GaN-based Quantum Well Heterostructure Field Effect Transistors (QW-HFETs)with high-sensitivity levels for the sensing of terahertz (THz) frequency electromagnetic radiation are proposed and developed.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture