SBIR/STTR Research Award
Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates
Award amount
$750,000Program and phase
SBIR · Phase IIAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2004-08-27
- Contract end date
- 2006-08-26
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2002.2
- Topic code
- MDA02-047
Research abstract
Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled and simulated to evaluate the impact of the substrate thermal conductivity on the electrical performance of the device. With these approaches and device improvements, advances in device performance, efficiency, and reliability will be achieved.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration