SBIR/STTR Research Award
High Temperature, High Power Density Electronic Devices
Award amount
$70,000Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- United Silicon Carbide, Inc.
- Proposal award date
- 2004-05-14
- Contract end date
- 2004-11-14
- UEI
- E1ZMN21UWJK5
- Solicitation number
- 2004.1
- Topic code
- N04-095
Research abstract
This SBIR project is proposed to develop a high-temperature and high power density power system based on SiC power modules. The entire system will be designed to operate up to 120C ~ 150C ambient temperature without active cooling and the SiC power modules will be developed for operations at even higher temperature (up to 250C) in case of air-cooling failure. Phase I will be concentrated on (i) design of SiC power switches and modules, (ii) fabrication of SiC power modules, (iii) high-temperature packaging of SiC power modules, (iv) inverter characterization of SiC power modules at room temperature and up to 250C as well as investigating SiC power device failure mode (in case of failure), (v) design of SiC high power motor control system and simulation and modeling to confirm the proposed design. In Phase II, the designed system will be built completely and tested against goals established in Phase I. A plan will be developed based on Phase II results for the design and manufacturing of a shipboard power system in the privately funded Phase III of commercialization development.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Power Solid State Electronic Switch for Use in Exploding Foil Initiator Applications
- High Current SiC Cascodes for Electric Drive Vehicle Power Electronics
- Silicon Carbide Gate Driver
- High Current SiC Cascodes for Electric Drive Vehicle Power Electronics
- High Current Silicon Carbide Schottky Diodes for Electric Drive Vehicle Power Electronics
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Temperture, High Power Density Electronic Devices
- High Temperature, High Power Density Electronic Devices
- Low Cost High Thermal Conductivity Packaging for SiC Based Motor Drive Designs
- High Temperature, High Power Density Electronic Devices
Research funding history
56 SBIR/STTR records share this UEI (1999–2018). Reported award amounts total $19,121,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation