High Temperature, High Power Density Electronic Devices

This project is to develop a power module based on emerging SiC semiconductor technologies capable of handling high current and voltage. SiC-based power electronics have the potential for reliable operation at higher junction temperature, higher frequency and higher power density than that can be achieved with silicon (Si) transistor technology, which the SiC technology-based overall system can be made smaller and more efficient. SiC has the potential for up to a 5-fold reduction in converter volume if high temperature, high frequency power electronics can be implemented. Currently, however, SiC switches and diodes typically have a current rating less than 20A. To achieve higher power level, it will be necessary to parallel SiC die within a high temperature power module. One key issue is to optimize the packaging of SiC switches and diode to allow multiple SiC die to be paralleled within a power module. This Phase I will demonstrate the feasibility of the development of a SiC power module to support a 60KW inverter for the Advanced Gun System (AGS) program.