Arrayed, Wide Bandgap Semiconductor Based High Intensity LED for Area Denial

Nanohmics proposes to develop a compact, efficient, high luminous intensity strobe light that emits in the 520 to 550 nm spectral range using gallium nitride (GaN) emitters. The design will be developed around an array of GaN surface mount chips for a 180 degree illumination pattern of light luminous intensities capable of temporarily disabling or disorienting potential adversaries (i.e. flashblinding). Nanohmics will also investigate the use of broad area emission from optically doped aluminum nitride as a down converter to optimize the emission wavelength for optimal eye sensitivity. The system will operate from rechargeable batteries, contain embedded circuits for variable frequency pulse generation, and an integrated radio-frequency link for remote programming and reporting of individual strobe systems. All strobe systems could then be operated from a single control unit for wide area coverage. Systems can be strategically placed to maximize probability of disabling the target(s). In Phase I, Nanohmics will determine optimal device properties and configurations. Based on this study, a prototype design of the system will be generated. During the Phase II, Nanohmics will take the most promising materials system and construct a prototype device optimized for Navy area denial requirements.