SBIR/STTR Research Award
AlInGaN-based Dual Ultraviolet/Infrared Detectors
Award amount
$99,200Program and phase
STTR · Phase IAward year
2001Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- ZLAMG4KBKN15
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
We propose to develop dual infra-red UV solar-blind AlInGaN-based photodetectors by combining our novel Strain/Energy Band Engineering (SEBE) technology, selective area growth technique, and device passivation for the leakage current reduction with theMultiple Quantum Well design for using intersubband transitions for the infrared detection and band-to-band transitions for the UV detection.Dual and/or multi-color detection/imaging systems will be developed for target recognition and commercialapplications such as medicine, spectroscopy, flame sensing, etc.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture