High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

We propose to develop commercially viable material growth technology for manufacturing of AlInGaN-based Double Heterostructure Field Effect Transistor (DHFET) epitaxial wafers on single crystal bulk AlN substrates. The epitaxial wafers will be optimizedfor the development of high-power, high frequency (X-band) transistors as building blocks for a new generation of ultra-high microwave power amplifiers. The use of a bulk AlN substrate allows us to reduce the dislocation density in the epitaxial layers,and to have excellent thermal conductivity comparable to that of semi-insulating 4H-SiC. We expect that III-Nitride based transistors on bulk AlN substrates will exhibit major improvements in the lifetime and reliability without compromising thermalmanagement of high power devices. Our Phase I program proved the feasibility of the novel AlInGaN-based DHFET design over single crystal bulk AlN substrates. In Phase II, we plan to optimize AlInGaN/InGaN/AlN DHFET design in order to maximize microwavepower and scaleup material growth up to 2¿¿ diameter AlN substrates.