High Precision in-situ Thickness Control for Growing AlN/GaN/InN-based High Power Transistor Structures

We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. This technology is based on the development of a reproducibleMOCVD epitaxial layer growth technology using novel high precision in-situ thickness control tools being developed by EMCORE Corp. We will combine our quaternary AlInGaN-based material growth expertise with the state-of-the-art MOCVD growth andcharacterization tools development at EMCORE. Recently, we demonstrated novel AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistor design, which allowed us to suppress the current dispersion and dramatically increase the reliability of thedevices. Despite impressive achievements, production of these devices is impossible without availability of commercial material supply, particularly, of large size epitaxial wafers with highly reproducible material properties. This project will allow us toprecisely control the layer thickness of AlN/GaN/InN materials.