Solving Reliability and Stability Problems for AlGaN/GaN Heterostructure Field Effect Transistors using BCB Passivation Technology

We propose to develop a new technology to AlGaN/GaN Heterostructure Field Effect Transistors (HFET) using benzocyclobutene (BCB) surface passivation process to improve microwave power and power added efficiency for the development of reliable and stablehigh-power AlGaN/GaN HFET microwave amplifiers. We will use this proprietary technology of the GaN-based BCB passivation for the fabrication of a more reliable and stable AlGaN/GaN HFETs. Similar to photoresist process, the BCB pattern can be wellcontrolled in the device fabrication. Comparing with conventional passivation, the BCB passivation technology has advantages of simple manufacturing process, low dielectric constant, no plasma-induced surface damage and no surface oxidization problem. Ourapproach will help to increase the power levels, and solve reliability and stability problems for GaN-based transistors, which is a key for the Transmit/Receive (T/R) module.