Development of in-situ Temperature and Bowing Control Tools for AlInGaN-based High Power Transistor Structures

We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. The technology will be based on the development of a reproducibleMOCVD epitaxial layer growth technology using novel high precision in-situ surface temperature and substrate bowing control tools being developed by EMCORE Corp. Recently, we demonstrated novel AlGaN/InGaN/GaN Double Heterostructure Field EffectTransistor design, which allowed us to suppress the current dispersion and dramatically increase the reliability of the devices. Despite impressive achievements, production of these devices is impossible without availability of commercial material supply,particularly, of large size epitaxial wafers with highly reproducible material properties. This project will allow us to precisely control the layer thickness of AlN/GaN/InN materials.