SBIR/STTR Research Award
BMDO 014A- Novel System for Bulk Growth of Semi-Insulating SiC
Award amount
$1,241,584Program and phase
SBIR · Phase IIAward year
2003Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- CAPESYM INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- CSZST8YFP7K1
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
A novel system for growth of bulk semi-insulating silicon carbide (SI-SiC) is proposed. In this growth system a novel technique is used to reduce the impurity levels in the grown crystal to levels much lower than what is currently available commerciallyor in the laboratories.. The growth system also replaces the traditional SiC powder source with a higher purity source material. The proposed system is to be built during this program and used to produce SI-SiC boules. The grown crystals will undergoextensive materials characterization.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Crystal Growth and Characterization of Doped VUV Crystals
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration