SBIR/STTR Research Award
AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates
Award amount
$98,234Program and phase
SBIR · Phase IAward year
2002Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- ZLAMG4KBKN15
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm under optical pumping. The obtained results will be used in the developing of the plan for Phase II.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture