Multiple Frequency GaN FETs on Aluminum Nitride Substrates

This program will develop high power, multiple frequency RF switches utilizing AlN substrates developed by Kyma Technologies, Inc. High-performance GaN-based devices, such as microwave transistors, have been demonstrated on sapphire and silicon carbidesubstrates; however, defects due to lattice and thermal expansion mismatch limit device performance. Dislocations significantly affect the performance of electronic devices by reducing carrier mobility, increasing noise and gate leakages, and causepremature device breakdown. Aluminum nitride substrates are expected to improve the performance of GaN-based microelectronic devices due to close lattice and thermal expansion match with GaN-based device structures. Additionally, AlN substrates are wellsuited to high frequency switching device applications due to their insulating nature and high thermal conductivity. Using Kyma Technologies, Inc.'s demonstrated AlN substrate technologies, high-power GaN-based switches for space-based applications will bedeveloped. This research and development effort will address issues in devices related to high-power handling and isolation, fast switching time and low insertion loss. Creating devices with these characteristics will be achieved by taking advantage of theunique properties of the AlN substrates produced by Kyma Technologies, Inc.The results of the program will benefit both satellite and terrestrial wireless communication systems. The use of an aluminum nitride substrate in microelectronic applications willdecrease the time to market for these devices. FETs developed in this project will have higher power handling and isolation, fast switching times, and low insertion losses. Commercial applications of GaN-based multiple frequency FETs include portableelectronics, linear high frequency power amplifiers, space-based systems, automotive electronics, and high temperature microelectronics.