SBIR/STTR Research Award
Plasma Wave Electronics
Award amount
$99,946Program and phase
STTR · Phase IAward year
2003Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- ZLAMG4KBKN15
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Terahertz plasma wave detectors and emitters utilizing the high-density 2-D electrons in submicron AlGaInN/GaN-based Quantum Well Heterostructure Field Effect Transistors (QW-HFETs) with high sensitivity levels for the sensing of terahertz (THz) frequencyelectromagnetic radiation are proposed The novel plasma wave terahertz detectors will find applications in biological and chemical hazard detection. Other applications include high bandwidth data transmission, compact radar ranges, and radioastronomy.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture