SBIR Phase I:Si-Ge Quantum Dot Laser

This Small Business Innovation Research Phase I project is to develop silicon germanium quantum dot lasers. The quantum dot approach has demonstratable advantages for the near-IR wavelengths of 1.3 to 1.55 micron. Near-IR lasers emitting at 1.3 ýým and 1.55 ýým are very important to fullfill the needs of increasing data bandwidth. By developing systems on silicon, a photonic integrated circuit can be fabricated that will address the needs of the telecom marketplace. A low cost 1.3 ýým wavelength laser is viewed by industry analysts as a key-enabling device for high volume production of fiber-optic transceivers for the metro and metro access markets.