BMDO 014A- Novel System for Bulk Growth of Semi-Insulating SiC

"It is proposed to develop a novel growth system capable of producing large diameter and long Semi-Insulating SiC crystals. The proposed system aims to achieve semi-insulating properties in the crystal by reducing the impurity levels in the reactorassociated with the graphite containment elements. The proposed growth system is based on using gas precursors instead of SiC powder, and uses a novel approach to reduce/eliminate residual impurities. It promises to reduce the residual impurities to atleast one order of magnitude lower than that achievable in laboratory HTCVD systems. The proposed system would allow production of large diameter SI-SiC crystals with lengths appreciably larger than those available by current production technologies. Thelarge-volume availability of SI-SiC wafers, in turn, will result in substantial advances in high speed and high power amplifiers for radars and telecommunication systems."