SBIR/STTR Research Award
Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates
Award amount
$749,990Program and phase
SBIR · Phase IIAward year
2007Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- GDV6R1VLRVN7
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The overall objective of this Phase II effort is to implement a HVPE crystal growth tool for large diameter GaN crystals suitable for 4" diameter substrates. Using this new crystal growth platform, Kyma will optimize its design and operation to develop a manufacturing process for growing high quality, low defect density semi-insulating GaN substrates. CFD modeling will be used extensively to identify the optimal system design and growth parameters. Bulk semi-insulating GaN substrates will be produced by slicing wafers from a 4" boule.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration