SBIR/STTR Research Award
Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride
Award amount
$600,000Program and phase
SBIR · Phase IIAward year
2001Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- GDV6R1VLRVN7
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance ofFaN-based devices. Moving to wafer size larger than 2
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration