Trap Engineering Technology for High-Reliability AlInGaN-based HFETs

The goal of this program is to develop commercially viable epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules using trap engineering technology. The newgeneration of III-Nitride HFETs will be less prone to current collapse and stability degradation. Deep traps are responsible for the current collapse and affect long-term stability of GaN devices. However, the quantitative understanding of the role oftraps in III-nitrides is limited. The proposed combined approach of technology CAD (TCAD) simulations and transistor testing will enable us to develop GaN device technology virtually immune to trap induced degradation. Our approach will be used to developquaternary AlInGaN-based epitaxial wafer manufacturing technology for fabrication of reliable high RF power transistors, which is a key for the Transmit/Receive (T/R) module.