CAD Oriented HEMT and HBT Models for Mullimeterwave Applications

Millimeterwaves offer the promise of large information bandwidths for communications and excellent resolution for surveillance and remote sensing systems. An impediment to millimeterwave technology advancement has been the lack of adequate computer-aided design (CAD) models for active devices. The emerging high electron mobility and heterojunction bipolar transistors (HEMT and HBT) are the devices of choice for many millimeterwave applications. We propose to formulate HEMT and HBT models suitable for use with commercial CAD software. For Phase I, we will study the physics of HEMT and HBT device by reviewing the published literature and obtaining input from industry and government researchers. We will then apply our expertise in robust, analytical, and table-based modeling to develop novel, computationally efficient CAD oriented models that reflect device physics. Our high frequency experience will enable us to extend the range of existing modeling concepts into the millimeterwave domain. The feasibility of these modeling concepts will be verified by demonstrating that all critical millimeterwave device behaviors are represented by the model. In Phase II, these models will be fully formulated and refined to make them practicable, computationally efficient, and extractable from measured data. They will then be integrated into a commercially available low-cost circuit simulation tool.