SBIR/STTR Research Award
SBIR Phase I: High Quality, Low Cost Bulk Gallium Nitride Substrates
Award amount
$99,935Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Soraa
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- PZ7CGJJR58C5
- Solicitation number
- NSF 08-548
- Topic code
- EL
Research abstract
This Small Business Innovation Research Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. The proposed approach utilizes a novel apparatus which is scalable to process volumes of hundreds of liters at modest cost. If successful this project will dramatically reduce the cost of GaN substrates for use in optoelectronics and energy conversion devices.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost GaN Substrates
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs
- Solvothermal growth of low-defect-density gallium nitride substrates
Research funding history
10 SBIR/STTR records share this UEI (2009–2014). Reported award amounts total $2,672,695. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Science Foundation