SBIR/STTR Research Award
High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B
Award amount
$69,838Program and phase
SBIR · Phase IAward year
2002Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- ZLAMG4KBKN15
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture