Thermal Management of GaN Based Power Amplifiers for X-Band Radars (XBR)

Advancements in high heat flux thermal management technology and its successful integration into future GaN-based microwave amplifiers are imperative to meet the long-term requirements of future radar systems. The GaN-based devices will operate with a highheat flux up to 1000W/cm2. However, the currently available technology is limited to around 200 W/cm2. In this project, IJ Research proposes a novel hybrid double side cooling (HDSC) technique. It is based on a unique integration of an innovativemicrochannel and microjet design along with the use of high thermal conductivity materials and a high latent heat coolant. We also will demonstrate our propriety 3-dimneison network microchannel cooling (3DNMC) and microjet cooling, and compare with thisnew proposed concept. These thermal management approaches will be able to offer a heat flux capacity of more than 1 kw/cm2 with a junction temperature increase less than 20C, a heat-removal capacity far better than the market-available product. They arealso cost-effective and lightweight. This new approach will provide an extremely efficient heat dissipation method, significantly enhancing heat-flux capability to more than 1,000 W /cm2. It is also a low-cost, compact, flexible thermal managementsolution. Its applications include high power amplifier, advanced radar, power module and motor-control for power conditioning electronics, various power system and hybrid electric drive. Its applications also include laser diodes and solid-state lasers,etc. The potential benefits are not only for the Navy, but also for other DoD agencies and commercial sectors.