Monolithic Integration of SiGeSn Focal Plane Arrays on Silicon ROIC

Attollo Engineering along with our STTR partner will build upon our progress made in Phase I on demonstrating eSWIR SiGeSn detectors grown directly on Silicon substrates, which can be scaled to 8” diameters in production.  The Phase II objective will be to demonstrate HD format 1280 x 1024 FPAs based on SiGeSn detectors that are wafer-scale fabricated onto ROIC wafers.  This approach avoids the need for serial die-to-die hybridization in traditional focal plane manufacturing of heterogeneous materials, significantly lowering cost.  Furthermore, the scalability of SiGeSn detectors to wafer diameters that match the Silicon read-out integrated circuit is conducive to Silicon foundry processing.  In Phase II, the Attollo team will focus on scaling the SiGeSn detectors down to pixel scales, while attaining low dark current and high QE on these devices.  The program will culminate in integrating our eSWIR SiGeSn FPA into a low SWaP camera core for characterization and delivery to the Air Force.