Development of Integrated Infrared Focal Plane Arrays on Si

This proposal describes the development of a process to synthesize  thick (>500 nm) GeSn materials on a template to be used to fabricate monolithically integrated FPAs (with CMOS ROICs) on Si with low defect density, low residual doping, and high EQE.  In phase I, we will demonstrate synthesis of GeSn materials and fabricate simple photodiode to verify materials quality improvements. We also demonstrate materials quality  improvement through the evidence of improved optical absorption, IR emission and x-ray rocking curve. In phase II, we will optimize the process and fabricate monolithically integrated FPAs operating at 2 micron or longer wavelengths with EQE>20%, dark current density < 1 µA/cm2