SBIR/STTR Research Award
Heteroepitaxy of Indium Phosphide-Based Quantum Cascade Lasers on Silicon Substrates
Award amount
$239,576Program and phase
STTR · Phase IAward year
2022Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- IRGLARE LLC
- Proposal award date
- 2022-08-03
- Contract end date
- 2023-11-10
- UEI
- ZDC9D8TZZV57
- Solicitation number
- 22.A
- Topic code
- N22A-T007
Research abstract
The development of heteroepitaxy growth and laser fabrication for the monolithic integration of InP-based quantum cascade laser (QCL) structures onto silicon substrates. Fully optimized QCLs-on-Si will deliver over 5W of CW power in a nearly diffraction limited beam (M2 < 1.5) with 25% wallplug efficiency. These devices will find immediate applications in directed infrared countermeasures, integrated platforms for man-portable or UAV-based chemical/biological sensing, environmental monitoring, out-of-band active (hyperspectral) imaging/illumination, and other infrared DoD applications.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Heteroepitaxy of Indium Phosphide-Based Quantum Cascade Lasers on Silicon Substrates
- Damage-Free High-Power Emission from Indium Phosphide-Based Solid-State Waveguides in the Long Wave Infrared
- Superconducting Thermal Spreader Enabled MWIR Band-IVb Quantum Cascade Laser with 65 W Average Output Power
- High Brightness Mid-IR Laser Illuminator
- Multi-Quantum Cascade Laser based sensors for high-speed characterization of flow parameters in hypersonic tunnels
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
35 SBIR/STTR records share this UEI (2019–2024). Reported award amounts total $16,655,500. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration