CeRAM at Radio Frequencies

This Phase II is intended for addressing a national defense-related mission need in the area of . Cerfe Labs has advanced to Technology Readiness Level (TRL) 4 a disruptive dual-use microelectronic memory technology. Our Correlated Electron Material (CEM) technology relies on the electrically induced quantum transition between metallic and insulating states. We have demonstrated capabilities that can deliver strategic advantage to multiple Air Force programs which are reliant on extreme capabilities in their underlying microelectronics. Of particular importance, we have shown high temperature operation up to 150C and have initial radiation testing to 1Mrad (gamma) for our non-volatile switch. This proposal focuses on prototyping an RF CeRAM device. Radio frequency (RF) electronics is a core strategic part of modern communication systems required by the Air Force, as evidenced by the many technologies developed for this purpose. A high-speed non-volatile RF switch can significantly improve RF communications commonly employed in aerospace systems, munition technologies, space vehicle technology, sensor technologies, and others. Based on the physics and results from novel materials in this new area of correlated electron devices, we believe that the use of correlated electron materials for an RF switch could provide compact and non-volatile RF devices while matching the performance of the best volatile solid-state RF switches. Non-volatile switch remembers the previous state in case of intermittent power supply and saves significant switching energy while allowing a compact and extremely light design.  We believe our technology will provide a superior solid-state RF switch in terms of RON x COFF and switching speed.  We have proven switching speed down to 2ns and expect to demonstrate faster switching with improved test hardware. With a successful Phase II, a Phase III program will transition this technology from “lab to fab” with the end state being the ability to produce working integrated circuits incorporating CeRAM RF devices at nanoscale within the existing Air Force supply chain. As Cerfe Labs have already shown fab compatibility at nanoscale from work at Imec (Belgium), the Phase III scope is significantly de-risked. Cerfe Labs have for instance pre-cleared the integration requirements regarding CeRAM with the MIT Lincoln Labs fab, who indicate that CeRAM integration is achievable in their fab. Other potential host fabs include Skywater, GlobalFoundries, Sandia, and TSI.  Integration on wafers with existing nanoscale CMOS is required to achieve the high-speed end-use integrated circuits.  Integration of CeRAM into one of the existing fabs and ramp to meaningful prototype integrated circuits targeted at RF needs is within the scope of a Phase III program.