4H-SiC BiCMOS Development on 6” wafers in a High-Volume Production Foundry

GeneSiC Semiconductor is leveraging recently reported novel techniques for high-performance 4H-silicon carbide MOSFETs, deep in-house expertise in SiC device design and robust device manufacturing facilities at automotive-qualified production foundry X-Fab Texas, for the development of a comprehensive 4H-SiC BiCMOS process platform in this DMEA SBIR program for mission-critical DoD applications and beyond. SiC BiCMOS integrated circuits will be fabricated at X-Fab Texas, along with a detailed process design kit. Based on the process, statistical data of critical parameters and long-term reliability data for technology qualification will be reported. For both CMOS transistors and high-voltage MOSFETs, compact models incorporating statistical data shall be included in the process design kit for fast and accurate circuit simulations. A successful commercialization of high-temperature SiC integrated circuits to be developed in this program will have a significant impact on electric actuation and engine control applications in the military/commercial aircraft and aero-space markets.